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A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.

Y. Chen, B. Mahajan, D. Varghese, S. Krishnan, V. Reddy, and M. Alam. IRPS, page 1-6. IEEE, (2020)

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Balakumar Vijayakrishnan

Edamakanti Chandrakanth Reddy

Vijay Divi

Vijay Singh

Malgi Prasad Reddy

Other publications of authors with the same name

All-digital PLL frequency and phase noise degradation measurements using simple on-chip monitoring circuits.G. Park, M. Kim, C. Kim, B. Kim, and V. Reddy. IRPS, page 5. IEEE, (2018)Recovery modeling of negative bias temperature instability (NBTI) for SPICE-compatible circuit aging simulators.H. Küflüoglu, C. Chancellor, M. Chen, C. Cirba, and V. Reddy. JETC, 10 (1): 2:1-2:16 (2014)An Integrated Modeling Paradigm of Circuit Reliability for 65nm CMOS Technology.W. Wang, V. Reddy, A. Krishnan, R. Vattikonda, S. Krishnan, and Y. Cao. CICC, page 511-514. IEEE, (2007)Controlling Aging in Timing-Critical Paths.S. Arasu, M. Nourani, J. Carulli, and V. Reddy. IEEE Des. Test, 33 (4): 82-91 (2016)Performance entitlement by exploiting transistor's BTI recovery.S. Arasu, M. Nourani, V. Reddy, and J. Carulli. ISQED, page 341-346. IEEE, (2013)Gate oxide failures due to anomalous stress from HBM ESD testers.C. Duvvury, R. Steinhoff, G. Boselli, V. Reddy, H. Kunz, S. Marum, and R. Cline. Microelectron. Reliab., 46 (5-6): 656-665 (2006)Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique.B. Mahajan, Y. Chen, D. Varghese, V. Reddy, S. Krishnan, and M. Alam. IRPS, page 1-6. IEEE, (2021)A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors.B. Mahajan, Y. Chen, M. Alam, D. Varghese, S. Krishnan, and V. Reddy. IRPS, page 10. IEEE, (2022)A design-for-reliability approach based on grading library cells for aging effects.S. Arasu, M. Nourani, J. Carulli, K. Butler, and V. Reddy. ITC, page 1-7. IEEE Computer Society, (2013)ACE: A robust variability and aging sensor for high-k/metal gate SoC.M. Chen, V. Reddy, S. Krishnan, J. Ondrusek, and Y. Cao. ESSDERC, page 182-185. IEEE, (2013)

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Disambiguation of "Reddy, Vijay"

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A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.

Please choose a person to relate this publication to

Balakumar Vijayakrishnan

Edamakanti Chandrakanth Reddy

Vijay Divi

Vijay Singh

Malgi Prasad Reddy

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Reddy, Vijay"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.

Please choose a person to relate this publication to

Balakumar Vijayakrishnan

Edamakanti Chandrakanth Reddy

Vijay Divi

Vijay Singh

Malgi Prasad Reddy

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.