( en | de | ru )

 

Disambiguation

From post

копироватьудалитьдобавить публикацию в буфер
A 0.5 mm2 integrated capacitive vibration sensor with sub-10 zF/rt-Hz noise floor.

, , , , , , , и . CICC, стр. 93-96. IEEE, (2005)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

Zahra Lakdawala

Hasnain Raza

Chang-Hasnain

Hasnain Ghazi

Syed Nazrul Hasnain

 

Другие публикации лиц с тем же именем

A 31.5dBm outphasing class-D power amplifier in 45nm CMOS with back-off efficiency enhancement by dynamic power control., , , , , , и . ESSCIRC, стр. 131-134. IEEE, (2011)MEMS, biomedicals, and sensors., и . CICC, IEEE, (2009)A 3.6GHz, 16mW ΣΔ DAC for a 802.11n / 802.16e transmitter with 30dB digital power control in 90nm CMOS., , , , и . ESSCIRC, стр. 202-205. IEEE, (2008)An in-situ temperature-sensing interface based on a SAR ADC in 45nm LP digital CMOS for the frequency-temperature compensation of crystal oscillators., , , , , и . ISSCC, стр. 316-317. IEEE, (2010)Analog techniques II., и . CICC, стр. 1. IEEE, (2013)A 630μW zero-crossing-based ΔΣ ADC using switched-resistor current sources in 45nm CMOS., , , , и . CICC, стр. 1-4. IEEE, (2009)Analog/Mixed-Signal Design Challenges in 7-nm CMOS and Beyond., , , , , , , , , и 7 other автор(ы). CICC, стр. 1-8. IEEE, (2019)A 2.4GHz WLAN transceiver with fully-integrated highly-linear 1.8V 28.4dBm PA, 34dBm T/R switch, 240MS/s DAC, 320MS/s ADC, and DPLL in 32nm SoC CMOS., , , , , , , , , и 5 other автор(ы). VLSIC, стр. 76-77. IEEE, (2012)A Class-E PA With Pulse-Width and Pulse-Position Modulation in 65 nm CMOS., , , , , , и . IEEE J. Solid State Circuits, 44 (6): 1668-1678 (2009)A flip-chip-packaged 1.8V 28dBm class-AB power amplifier with shielded concentric transformers in 32nm SoC CMOS., , , , и . ISSCC, стр. 426-428. IEEE, (2011)