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CMOS technology-year 2010 and beyond.. IEEE J. Solid State Circuits, 34 (3): 357-366 (1999)Foundries, EDA vendors, and designers: who shoulders the blame when a design doesn't work in the nano-scale and wireless era?, , , , , , , , , and 1 other author(s). CICC, page 618-619. IEEE, (2005)Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing., , , , , , , and . Microelectron. Reliab., (2018)Trend of CMOS downsizing and its reliability., and . Microelectron. Reliab., 42 (9-11): 1251-1258 (2002)Si nanowire FET and its modeling., , , , , , , , and . Sci. China Inf. Sci., 54 (5): 1004-1011 (2011)3-D Angular Spectrum Measurements at 5 GHz in a Residential Two-Story House., , , and . IEICE Trans. Commun., 90-B (9): 2344-2351 (2007)Equivalent Noise Temperature Representation for Scaled MOSFETs., , and . IEICE Trans. Electron., 93-C (10): 1550-1552 (2010)Improvement on sheet resistance uniformity of nickel silicide by optimization of silicidation conditions., , , , , , , , and . Microelectron. Reliab., 53 (5): 665-669 (2013)Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes., , , , , and . Microelectron. Reliab., (2016)Silicon integrated circuit technology from past to future., and . Microelectron. Reliab., 42 (4-5): 465-491 (2002)