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A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction.

, , , , and . Microelectron. Reliab., 55 (2): 293-307 (2015)

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A review of recent MOSFET threshold voltage extraction methods., , , , , and . Microelectron. Reliab., 42 (4-5): 583-596 (2002)A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction., , , , and . Microelectron. Reliab., 55 (2): 293-307 (2015)Determination of trap cross-section in a-Si: H p-i-n diodes parameters using simulation and parameter extraction., , , and . Microelectron. Reliab., 41 (4): 605-610 (2001)Understanding threshold voltage in undoped-body MOSFETs: An appraisal of various criteria., , and . Microelectron. Reliab., 46 (5-6): 731-742 (2006)Revisiting MOSFET threshold voltage extraction methods., , , , , and . Microelectron. Reliab., 53 (1): 90-104 (2013)Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction., , , , , , and . Microelectron. Reliab., 49 (7): 689-692 (2009)An explicit multi-exponential model for semiconductor junctions with series and shunt resistances., , , , , and . Microelectron. Reliab., 51 (12): 2044-2048 (2011)Comments on Ä sinh Resistor and Its Application to tanh Linearization"., , , , and . IEEE J. Solid State Circuits, 41 (10): 2359 (2006)A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters., , , , , , and . Microelectron. Reliab., (2017)Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs., , , , , , , and . Microelectron. Reliab., 42 (3): 343-347 (2002)