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A new gain controllable on-chip active balun for 5 GHz direct conversion receiver., , , и . ISCAS (5), стр. 5115-5118. IEEE, (2005)A 0.5-16.3 Gbps Multi-Standard Serial Transceiver With 219 mW/Channel in 16-nm FinFET., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 52 (7): 1783-1797 (2017)3.3 A 0.5-to-32.75Gb/s flexible-reach wireline transceiver in 20nm CMOS., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 1-3. IEEE, (2015)A wide common-mode fully-adaptive multi-standard 12.5Gb/s backplane transceiver in 28nm CMOS., , , , , , , , , и 6 other автор(ы). VLSIC, стр. 104-105. IEEE, (2012)A 40-to-56 Gb/s PAM-4 Receiver With Ten-Tap Direct Decision-Feedback Equalization in 16-nm FinFET., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 52 (12): 3486-3502 (2017)A Fully Adaptive 19-58-Gb/s PAM-4 and 9.5-29-Gb/s NRZ Wireline Transceiver With Configurable ADC in 16-nm FinFET., , , , , , , , , и 6 other автор(ы). IEEE J. Solid State Circuits, 54 (1): 18-28 (2019)A O.96pJ/b 7 × 50Gb/s-per-Fiber WDM Receiver with Stacked 7nm CMOS and 45nm Silicon Photonic Dies., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 204-205. IEEE, (2023)A fully adaptive 19-to-56Gb/s PAM-4 wireline transceiver with a configurable ADC in 16nm FinFET., , , , , , , , , и 6 other автор(ы). ISSCC, стр. 108-110. IEEE, (2018)A 112GB/S PAM4 Wireline Receiver Using a 64-Way Time-Interleaved SAR ADC in 16NM FinFET., , , , , , , , , и 5 other автор(ы). VLSI Circuits, стр. 47-48. IEEE, (2018)Design of high-speed wireline transceivers for backplane communications in 28nm CMOS., , , , , , , , , и 1 other автор(ы). CICC, стр. 1-4. IEEE, (2012)