( en | de | ru )

 

Disambiguation of "Stangoni, Maria"

Author of the publication

copydeleteadd this publication to your clipboard
Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation.

, , , , and . Microelectron. Reliab., 49 (9-11): 972-976 (2009)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Maria Virginia Stangoni

Petra Marialke-Kandaouroff

Manuel Mariadasa

Malaiyalam Mariappan

Norman Marian

 

Other publications of authors with the same name

A New Procedure to Define the Zero-Field Condition and to Delineate pn-Junctions in Silicon Devices by Scanning Capacitance Microscopy., , and . Microelectron. Reliab., 43 (9-11): 1651-1656 (2003)On the Use of Neural Networks to Solve the Reverse Modelling Problem for the Quantification of Dopant Profiles Extracted by Scanning Probe Microscopy Techniques., , , , and . Microelectron. Reliab., 44 (9-11): 1703-1708 (2004)On the behaviour of the selective iodine-based gold etch for the failure analysis of aged optoelectronic devices., , , , and . Microelectron. Reliab., 43 (9-11): 1771-1776 (2003)Simulation and Experimental Validation of Scanning Capacitance Microscopy Measurements across Low-doped Epitaxial PN-Junction., , , , and . Microelectron. Reliab., 42 (9-11): 1701-1706 (2002)Assessment of the Analytical Capabilities of Scanning Capacitance and Scanning Spreading Resistance Microscopy Applied to Semiconductor Devices., , and . Microelectron. Reliab., 45 (9-11): 1532-1537 (2005)Design of optimum electron beam irradiation processes for the reliability of electric cables used in critical applications., , , , and . Microelectron. Reliab., 51 (9-11): 1479-1483 (2011)Two-dimensional Dopant Profiling and Imaging of 4H Silicon Carbide Devices by Secondary Electron Potential Contrast., , , and . Microelectron. Reliab., 45 (9-11): 1499-1504 (2005)2D Dopant Profiling on 4H Silicon Carbide P+N Junction by Scanning Capacitance and Scanning Electron Microscopy., , , , , and . Microelectron. Reliab., 44 (9-11): 1681-1686 (2004)Ensuring the reliability of electron beam crosslinked electric cables by the optimization of the dose depth distribution with Monte Carlo simulation., , , , and . Microelectron. Reliab., 49 (9-11): 972-976 (2009)