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Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis., , , , , , , , , and 3 other author(s). Microelectron. Reliab., (2016)Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop., , , , , , , and . Microelectron. Reliab., 52 (9-10): 2188-2193 (2012)GaN-based HEMTs tested under high temperature storage test., , , , , , , and . Microelectron. Reliab., 51 (9-11): 1717-1720 (2011)Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs., , , , , , , , and . IRPS, page 6. IEEE, (2015)High temperature behaviour of GaN-on-Si high power MISHEMT devices., , , , , , , , and . ESSDERC, page 302-305. IEEE, (2012)Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress., , , , , , , and . Microelectron. Reliab., 54 (9-10): 2232-2236 (2014)Impact of gate insulator on the dc and dynamic performance of AlGaN/GaN MIS-HEMTs., , , , , , , , , and . Microelectron. Reliab., 55 (9-10): 1692-1696 (2015)IV, noise and electroluminescence analysis of stress-induced percolation paths in AlGaN/GaN high electron mobility transistors., , , , , , and . Microelectron. Reliab., 52 (9-10): 2194-2199 (2012)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate., , , , , , , , , and . Microelectron. Reliab., (2016)Breakdown investigation in GaN-based MIS-HEMT devices., , , , , , , , , and 2 other author(s). ESSDERC, page 377-380. IEEE, (2014)