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Self-Repairing SRAM Using On-Chip Detection and Compensation., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 18 (1): 75-84 (2010)A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line., , , , , , and . Microelectron. J., (2016)Reducing parasitic BJT effects in partially depleted SOI digital logic circuits., , and . Microelectron. J., 39 (2): 275-285 (2008)Modeling and Analysis of Leakage Currents in Double-Gate Technologies., , , and . IEEE Trans. Comput. Aided Des. Integr. Circuits Syst., 25 (10): 2052-2061 (2006)All digitally controlled linear voltage regulator with PMOS strength self-calibration for ripple reduction., , , , , , and . VLSI-DAT, page 1-4. IEEE, (2015)A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control., , , , , , , , , and 9 other author(s). SoCC, page 197-200. IEEE, (2011)Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 57-I (12): 3039-3047 (2010)40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist., , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (9): 2578-2585 (2014)Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits and 6T SRAM Cells., , and . ISLPED, page 242-247. ACM, (2016)Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells., , , and . ISCAS, page 1122-1125. IEEE, (2014)