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A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line., , , , , , and . Microelectron. J., (2016)40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist., , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (9): 2578-2585 (2014)Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 57-I (12): 3039-3047 (2010)Testing strategies for a 9T sub-threshold SRAM., , , , , , and . ITC, page 1-10. IEEE Computer Society, (2012)A 40nm 1.0Mb pipeline 6T SRAM with variation-tolerant Step-Up Word-Line and Adaptive Data-Aware Write-Assist., , , , , , , , , and 9 other author(s). ISCAS, page 1468-1471. IEEE, (2013)8T single-ended sub-threshold SRAM with cross-point data-aware write operation., , , , and . ISLPED, page 169-174. IEEE/ACM, (2011)A 40nm 1.0Mb 6T pipeline SRAM with digital-based Bit-Line Under-Drive, Three-Step-Up Word-Line, Adaptive Data-Aware Write-Assist with VCS tracking and Adaptive Voltage Detector for boosting control., , , , , , , , , and 3 other author(s). SoCC, page 110-115. IEEE, (2013)A 0.325 V, 600-kHz, 40-nm 72-kb 9T Subthreshold SRAM with Aligned Boosted Write Wordline and Negative Write Bitline Write-Assist., , , , , , , , , and . IEEE Trans. Very Large Scale Integr. Syst., 23 (5): 958-962 (2015)A 40 nm 0.32 V 3.5 MHz 11T single-ended bit-interleaving subthreshold SRAM with data-aware write-assist., , , , , and . ISLPED, page 51-56. IEEE, (2013)A reconfigurable MAC architecture implemented with mixed-Vt standard cell library., , , , , and . ISCAS, page 3426-3429. IEEE, (2008)