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Dual-Tap Pipelined-Code-Memory Coded-Exposure-Pixel CMOS Image Sensor for Multi-Exposure Single-Frame Computational Imaging.

, , , , , , , , , , , and . ISSCC, page 102-104. IEEE, (2019)

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Time-resolved single-photon detectors: Integration challenges in CMOS technologies., , , and . ICICDT, page 197-200. IEEE, (2018)A reconfigurable 224×272-pixel single-photon image sensor for photon timestamping, counting and binary imaging at 30.0-μm pitch in 11 0nm CIS technology., , , , , and . ESSCIRC, page 189-192. IEEE, (2022)Low-Noise Single Photon Avalanche Diodes in a 110nm CIS Technology., , , and . ESSDERC, page 94-97. IEEE, (2018)CMOS SPADs selection, modeling and characterization towards image sensors implementation., , , , and . ICECS, page 332-335. IEEE, (2012)A 32×32-pixel time-resolved single-photon image sensor with 44.64μm pitch and 19.48% fill-factor with on-chip row/frame skipping features reaching 800kHz observation rate for quantum physics applications., , , , , , , , , and . ISSCC, page 98-100. IEEE, (2018)Dual-Tap Pipelined-Code-Memory Coded-Exposure-Pixel CMOS Image Sensor for Multi-Exposure Single-Frame Computational Imaging., , , , , , , , , and 2 other author(s). ISSCC, page 102-104. IEEE, (2019)Dual-Tap Computational Photography Image Sensor With Per-Pixel Pipelined Digital Memory for Intra-Frame Coded Multi-Exposure., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 54 (11): 3191-3202 (2019)A 32 × 32-Pixel CMOS Imager for Quantum Optics With Per-SPAD TDC, 19.48% Fill-Factor in a 44.64-μm Pitch Reaching 1-MHz Observation Rate., , , , , , , and . IEEE J. Solid State Circuits, 55 (10): 2819-2830 (2020)WSN based on accelerometer, GPS and RSSI measurements for train integrity monitoring., , , , and . CoDIT, page 662-667. IEEE, (2017)