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Bias dependence of TID radiation responses of 0.13 μm partially depleted SOI NMOSFETs., , , , , , и . Microelectron. Reliab., 53 (2): 259-264 (2013)Total ionizing dose effect in 0.2 μm PDSOI NMOSFETs with shallow trench isolation., , , , , и . Microelectron. Reliab., 54 (4): 730-737 (2014)Total ionizing dose effects in elementary devices for 180-nm flash technologies., , , , , , , и . Microelectron. Reliab., 51 (8): 1295-1301 (2011)Characterization and Classification of Heavy Ion Induced Failures in FPGA-based Logical Circuits., , , , и . ASICON, стр. 1-4. IEEE, (2021)Impact of within-wafer process variability on radiation response., , , , , , , и . Microelectron. J., 42 (6): 883-888 (2011)Large-tilt Heavy Ions Induced SEU in Multiple Radiation Hardened 22 nm FDSOI SRAMs., , , , , , , и . IRPS, стр. 1-5. IEEE, (2020)Bias dependence of TID induced single transistor latch for 0.13 μm partially depleted SOI input/output NMOSFETs., , , , , , , и . Microelectron. Reliab., (2016)Comprehensive study on the TID effects of 0.13 μm partially depleted SOI NMOSFETs., , , , , и . Microelectron. J., 44 (2): 86-93 (2013)Radiation-induced shallow trench isolation leakage in 180-nm flash memory technology., , , , , , и . Microelectron. Reliab., 52 (1): 130-136 (2012)The impact of total ionizing radiation on body effect., , , , , , и . Microelectron. J., 42 (12): 1396-1399 (2011)