( en | de | ru )

 

Disambiguation of "Zanoni, Enrico"

Author of the publication

copydeleteadd this publication to your clipboard
Demonstration of Bilayer Gate Insulator for Improved Reliability in GaN-on-Si Vertical Transistors.

, , , , , , , , , and . IRPS, page 1-5. IEEE, (2020)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Zanoni Dias

Ivo Zanoni

Reto Giacomi Zanoni

Enrico Fest

Enrico Metzler

 

Other publications of authors with the same name

Electrical characterization and reliability study of HEMTs on composite substrates under high electric fields., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1370-1374 (2008)Impact of field-plate geometry on the reliability of GaN-on-SiC HEMTs., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1461-1465 (2013)"Hot-plugging" of LED modules: Electrical characterization and device degradation., , , , , , and . Microelectron. Reliab., 53 (9-11): 1524-1528 (2013)Failure signatures on 0.25 μm GaN HEMTs for high-power RF applications., , , , , , , , and . Microelectron. Reliab., 54 (9-10): 2237-2241 (2014)Evidence for temperature-dependent buffer-induced trapping in GaN-on-silicon power transistors., , , , , , , , and . IRPS, page 2. IEEE, (2015)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 4. IEEE, (2018)GaN RF HEMT Reliability: Impact of Device Processing on I-V Curve Stability and Current Collapse., , , , , , , , , and 2 other author(s). IRPS, page 11. IEEE, (2022)Modeling of Substrate Noise Injected by Digital Libraries., , , , , , , and . ISQED, page 488-492. IEEE Computer Society, (2001)Degradation of dc and pulsed characteristics of InAlN/GaN HEMTs under different proton fluences., , , , , , , , , and 4 other author(s). ESSDERC, page 381-384. IEEE, (2014)Traps localization and analysis in GaN HEMTs., , , , and . Microelectron. Reliab., 54 (9-10): 2222-2226 (2014)