Author of the publication

Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates.

, , , , , , and . Microelectron. Reliab., 43 (9-11): 1713-1718 (2003)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

 

Other publications of authors with the same name

Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors., , , and . Microelectron. Reliab., 44 (9-11): 1361-1368 (2004)Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses., , , , , , , and . Microelectron. Reliab., 41 (9-10): 1573-1578 (2001)Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test., , , , , , , , , and 1 other author(s). Microelectron. Reliab., 52 (9-10): 2184-2187 (2012)Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC., , , , , , , and . Microelectron. Reliab., 47 (9-11): 1630-1633 (2007)Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques., , , , , , , and . Microelectron. Reliab., 48 (8-9): 1366-1369 (2008)Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs., , , , , , , , , and 3 other author(s). Microelectron. Reliab., 49 (9-11): 1216-1221 (2009)Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements., , , , , , , , , and 4 other author(s). Microelectron. Reliab., 53 (9-11): 1491-1495 (2013)Degradation mechanisms induced by thermal and bias stresses in InP HEMTs., , , , , and . Microelectron. Reliab., 42 (9-11): 1575-1580 (2002)Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors., , , , and . IRPS, page 4. IEEE, (2018)AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements., , , , , and . Microelectron. Reliab., 46 (9-11): 1725-1730 (2006)