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Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology.

, , , , , , , , , , and . IRPS, page 6. IEEE, (2018)

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Aging-Aware Design Verification Methods Under Real Product Operating Conditions., , , , , , and . IRPS, page 1-4. IEEE, (2019)Effects of Far-BEOL anneal on the WLR and product reliability characterization of FinFET process technology., , , , , , , , , and 1 other author(s). IRPS, page 6. IEEE, (2018)Time Dependent Variability in Advanced FinFET Technology for End-of-Lifetime Reliability Prediction., , , , , , , and . IRPS, page 1-6. IEEE, (2021)Investigation of BTI characteristics and its behavior on 10 nm SRAM with high-k/metal gate FinFET technology having multi-VT gate stack., , , , , , and . Microelectron. Reliab., (2018)Accelerator-Based Thermal-Neutron Beam by Compact and Low-Cost Moderator for Soft-Error Evaluation in Semiconductor Devices., , , , , , , , and . IRPS, page 53-1. IEEE, (2022)A Systematic Study of HCI Improvement in FinFET with Source/Drain Implant and Geometry Modulation., , , , , , , , , and 6 other author(s). IRPS, page 5. IEEE, (2024)Polarity Dependency of MOL-TDDB in FinFET., , , , , , , , , and 2 other author(s). IRPS, page 1-3. IEEE, (2023)Advanced Self-heating Model and Methodology for Layout Proximity Effect in FinFET Technology., , , , , , , , , and 3 other author(s). IRPS, page 1-5. IEEE, (2020)An Analysis of CDM-induced BTI-like Degradation using VF-TLP in Advanced FinFET Technology., , , , , , , , , and . IRPS, page 1-5. IEEE, (2024)Impact of Barrier Metal Thickness on SRAM Reliability., , , , , , , , , and 2 other author(s). IRPS, page 1-6. IEEE, (2023)