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Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology.

, , , , , , , and . Microelectron. Reliab., 52 (9-10): 1998-2004 (2012)

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6T SRAM performance and power gain using double gate MOS in 28nm FDSOI technology., , , , and . ICICDT, page 89-92. IEEE, (2013)BIMOS transistor and its applications in ESD protection in advanced CMOS technology., , , , , , , , and . ICICDT, page 1-4. IEEE, (2012)Reliability impact due to high current, lattice and hot carriers temperatures on β(2×2) matrix ESD power devices for advanced CMOS technologies., , , , , and . Microelectron. Reliab., 51 (9-11): 1608-1613 (2011)Symmetrical ESD protection for advanced CMOS technology dedicated to 100 GHz RF application., , , , , , , and . Microelectron. Reliab., 53 (9-11): 1284-1287 (2013)Inventory of silicon signatures induced by CDM event on deep sub-micronic CMOS-BICMOS technologies., , , , , , , , , and 3 other author(s). Microelectron. Reliab., 50 (9-11): 1388-1392 (2010)ESD protection using BIMOS transistor in 100 GHz RF application for advanced CMOS technology., , , , , , and . ICICDT, page 199-202. IEEE, (2013)A full characterization of single pitch IO ESD protection based on silicon controlled rectifier and dynamic trigger circuit in CMOS 32 nm node., , , , , and . Microelectron. Reliab., 51 (9-11): 1614-1617 (2011)Circuit optimization of 4T, 6T, 8T, 10T SRAM bitcells in 28nm UTBB FD-SOI technology using back-gate bias control., , , , , and . ESSCIRC, page 415-418. IEEE, (2013)High swing low capacitance ESD RF protections in advanced CMOS technologies., , , and . ICICDT, page 1-4. IEEE, (2012)Symmetrical ESD trigger and pull-up using BIMOS transistor in advanced CMOS technology., , , , , , , and . Microelectron. Reliab., 52 (9-10): 1998-2004 (2012)