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Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond.

, , , and . Microelectron. Reliab., 53 (2): 229-235 (2013)

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Qualification of bumping processes: Experimental and numerical investigations on mechanical stress and failure modes induced by shear test., , , , , , and . Microelectron. Reliab., 55 (6): 980-989 (2015)Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond., , , and . Microelectron. Reliab., 53 (2): 229-235 (2013)Thermo-mechanical study of a 2.5D passive silicon interposer technology: Experimental, numerical and In-Situ stress sensors developments., , , , , , , , , and 1 other author(s). 3DIC, page 1-7. IEEE, (2013)Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies., , , , and . Microelectron. Reliab., 54 (4): 764-772 (2014)Thermo-mechanical characterization of passive stress sensors in Si interposer., , , , , , , , and . Microelectron. Reliab., 55 (5): 738-746 (2015)Fracture phenomena induced by Front-End/Back-End interactions: Dedicated failure analysis and numerical developments., , and . Microelectron. Reliab., 50 (1): 75-85 (2010)Cu-SiO2 hybrid bonding simulation including surface roughness and viscoplastic material modeling: A critical comparison of 2D and 3D modeling approach., , , , , , , and . Microelectron. Reliab., (2018)Thermal correlation between measurements and FEM simulations in 3D ICs., , , , , , , , , and 4 other author(s). 3DIC, page 1-6. IEEE, (2013)