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Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond.

V. Fiori, S. Gallois-Garreignot, H. Jaouen, and C. Tavernier. Microelectron. Reliab., 53 (2): 229-235 (2013)

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Clément Grimal

Clément Ménier

Clément Dupont

Clément Quinton

Felix Clément

Other publications of authors with the same name

Qualification of bumping processes: Experimental and numerical investigations on mechanical stress and failure modes induced by shear test.S. Gallois-Garreignot, N. Benzima, E. Benmussa, C. Moutin, P. Bouchard, V. Fiori, and C. Tavernier. Microelectron. Reliab., 55 (6): 980-989 (2015)Wafer level measurements and numerical analysis of self-heating phenomena in nano-scale SOI MOSFETs.G. Garegnani, V. Fiori, G. Gouget, F. Monsieur, and C. Tavernier. Microelectron. Reliab., (2016)Thermal correlation between measurements and FEM simulations in 3D ICs.P. Souare, F. de Crecy, V. Fiori, M. Jamaa, A. Farcy, S. Gallois-Garreignot, A. Borbely, J. Colonna, P. Coudrain, B. Giraud and 4 other author(s). 3DIC, page 1-6. IEEE, (2013)Laser-induced fault effects in security-dedicated circuits.R. Leveugle, P. Maistri, P. Vanhauwaert, F. Lu, G. Natale, M. Flottes, B. Rouzeyre, A. Papadimitriou, D. Hély, V. Beroulle and 9 other author(s). VLSI-SoC, page 1-6. IEEE, (2014)Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond.V. Fiori, S. Gallois-Garreignot, H. Jaouen, and C. Tavernier. Microelectron. Reliab., 53 (2): 229-235 (2013)Laser-Induced Fault Effects in Security-Dedicated Circuits.V. Beroulle, P. Candelier, S. Castro, G. Natale, J. Dutertre, M. Flottes, D. Hély, G. Hubert, R. Leveugle, F. Lu and 5 other author(s). VLSI-SoC (Selected Papers), volume 464 of IFIP Advances in Information and Communication Technology, page 220-240. Springer, (2014)Numerical analysis of thermo-mechanical and mobility effects for 28 nm node and beyond: Comparison and design consequences over bumping technologies.V. Fiori, K. Ewuame, S. Gallois-Garreignot, H. Jaouen, and C. Tavernier. Microelectron. Reliab., 54 (4): 764-772 (2014)The importance of the spacer region to explain short channels mobility collapse in 28nm Bulk and FDSOI technologies.F. Monsieur, Y. Denis, D. Rideau, V. Quenette, G. Gouget, C. Tavernier, H. Jaouen, G. Ghibaudo, and J. Lacord. ESSDERC, page 254-257. IEEE, (2014)

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Disambiguation of "Tavernier, Clément"

Please choose a person to relate this publication to

Clément Grimal

Clément Ménier

Clément Dupont

Clément Quinton

Felix Clément

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Tavernier, Clément"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Strain engineering for bumping over IPs: Numerical investigations of thermo-mechanical stress induced mobility variations for CMOS 32 nm and beyond.

Please choose a person to relate this publication to

Clément Grimal

Clément Ménier

Clément Dupont

Clément Quinton

Felix Clément

Other publications of authors with the same name

Disambiguation