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Electrical characterization and analysis techniques for the high-kappa era.

, , , , , and . Microelectron. Reliab., 47 (4-5): 479-488 (2007)

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Reliability of High-K Dielectrics and Its Dependence on Gate Electrode and Interfacial / High-K Bi-Layer Structure., , , , , and . Microelectron. Reliab., 44 (9-11): 1513-1518 (2004)Probing stress effects in HfO2 gate stacks with time dependent measurements., , , , , , , , , and . Microelectron. Reliab., 45 (5-6): 806-810 (2005)Applications of DCIV method to NBTI characterization., , and . Microelectron. Reliab., 47 (9-11): 1366-1372 (2007)Electrical characterization and analysis techniques for the high-kappa era., , , , , and . Microelectron. Reliab., 47 (4-5): 479-488 (2007)3-Dimensional Integration with High Interconnection Density., , and . ICICDT, page 77-80. IEEE, (2022)Characterization of high pressure hydrogen annealing effect on polysilicon channel field effect transistors using isothermal deep level trap spectroscopy., , , , , , and . ICICDT, page 1-4. IEEE, (2016)A novel approach to characterization of progressive breakdown in high-k/metal gate stacks., , , , , , , , and . Microelectron. Reliab., 48 (11-12): 1759-1764 (2008)Effect of Pre-Existing Defects on Reliability Assessment of High-K Gate Dielectrics., , , , , , , and . Microelectron. Reliab., 44 (9-11): 1509-1512 (2004)