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Influence of the SiO2 layer thickness on the degradation of HfO2/SiO2 stacks subjected to static and dynamic stress conditions., , , , and . Microelectron. Reliab., 47 (4-5): 544-547 (2007)SPICE modelling of hot-carrier degradation in Si1-xGex S/D and HfSiON based pMOS transistors., , , , , , , and . Microelectron. Reliab., 50 (9-11): 1263-1266 (2010)Variability Influence on FinFET-Based On-Chip Memory Data Paths., , , and . J. Low Power Electron., 11 (2): 250-255 (2015)SET and noise fault tolerant circuit design techniques: Application to 7 nm FinFET., , , , and . Microelectron. Reliab., 54 (4): 738-745 (2014)Modem Gain-Cell Memories in Advanced Technologies., , and . IOLTS, page 65-68. IEEE, (2018)RRAM variability and its mitigation schemes., , , and . PATMOS, page 141-146. IEEE, (2016)Variability robustness enhancement for 7nm FinFET 3T1D-DRAM cells., , , , and . MWSCAS, page 81-84. IEEE, (2013)Design and implementation of an adaptive proactive reconfiguration technique for SRAM caches., , , and . DATE, page 1303-1306. EDA Consortium San Jose, CA, USA / ACM DL, (2013)Memristive crossbar design and test in non-adaptive proactive reconfiguring scheme., , and . ECCTD, page 1-4. IEEE, (2015)UTBB FDSOI technology flexibility for ultra low power internet-of-things applications., , , , , and . ESSDERC, page 164-167. IEEE, (2015)