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Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?

X. Jehl, B. Roche, M. Sanquer, B. Voisin, R. Wacquez, V. Deshpande, B. Previtali, M. Vinet, J. Verduijn, G. Tettamanzi, S. Rogge, D. Kotekar-Patil, M. Ruoff, D. Kern, D. Wharam, M. Belli, E. Prati, и M. Fanciulli. FET, том 7 из Procedia Computer Science, стр. 266-268. Elsevier, (2011)

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Stefanie Marczoch

Langzeitverlauf von 200 Patienten mit kraniofazialen und zervikalen Dystonien bis zu 12 Jahre nach der ersten Botulinumtoxin-BehandlungS. Marczoch. TU München, (2009)

Toni Marcy

Ursula Marcinek

Wolfgang Marcus

Hans-Peter Marchal

Другие публикации лиц с тем же именем

Towards scalable silicon quantum computing.M. Vinet, L. Hutin, B. Bertrand, H. Bohuslavskyi, A. Corna, A. Amisse, A. Crippa, L. Bourdet, R. Maurand, S. Barraud и 7 other автор(ы). DRC, стр. 1-2. IEEE, (2018)Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?X. Jehl, B. Roche, M. Sanquer, B. Voisin, R. Wacquez, V. Deshpande, B. Previtali, M. Vinet, J. Verduijn, G. Tettamanzi и 8 other автор(ы). FET, том 7 из Procedia Computer Science, стр. 266-268. Elsevier, (2011)Quantum conductance fluctuations and maximum entropy ensembles for the transfer matrixJ. Pichard, и M. Sanquer. Physica A: Statistical and Theoretical Physics, 167 (1): 66--92 (01.08.1990)Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities.V. Deshpande, S. Barraud, X. Jehl, R. Wacquez, M. Vinet, R. Coquand, B. Roche, B. Voisin, F. Triozon, C. Vizioz и 6 other автор(ы). ESSDERC, стр. 121-124. IEEE, (2012)SOI CMOS technology for quantum information processing.L. Hutin, B. Bertrand, R. Maurand, M. Urdampilleta, B. Jadot, H. Bohuslavskyi, L. Bourdet, Y. Niquet, X. Jehl, S. Barraud и 5 other автор(ы). ICICDT, стр. 1-4. IEEE, (2017)Si MOS technology for spin-based quantum computing.L. Hutin, B. Bertrand, R. Maurand, A. Crippa, M. Urdampilleta, Y. Kim, A. Amisse, H. Bohuslavskyi, L. Bourdet, S. Barraud и 7 other автор(ы). ESSDERC, стр. 12-17. IEEE, (2018)The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire.B. Voisin, B. Roche, E. Dupont-Ferrier, B. Sklénard, M. Cobian, X. Jehl, O. Cueto, R. Wacquez, M. Vinet, Y. Niquet и 2 other автор(ы). ESSDERC, стр. 147-150. IEEE, (2013)19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot.L. Guevel, G. Billiot, X. Jehl, S. Franceschi, M. Zurita, Y. Thonnart, M. Vinet, M. Sanquer, R. Maurand, A. Jansen и 1 other автор(ы). ISSCC, стр. 306-308. IEEE, (2020)

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Please choose a person to relate this publication to

Stefanie Marczoch

Toni Marcy

Ursula Marcinek

Wolfgang Marcus

Hans-Peter Marchal

Другие публикации лиц с тем же именем

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