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Disambiguation of "Bakeroot, Benoit"

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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

, , , , , , , , and . IRPS, page 6. IEEE, (2015)

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Benoît Cordonnier

Non-Newtonian effects in silicate liquids and crystal bearing melts: implication for magma dynamics. Uni München, (2009)

David Benoit

Benoit Courmont

Benoît Mindzeng

Barbara Benoit

 

Other publications of authors with the same name

Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability., , , , , , , , , and 6 other author(s). IRPS, page 1-10. IEEE, (2019)ON-state reliability of GaN-on-Si Schottky Barrier Diodes: Si3N4 vs. Al2O3/SiO2 GET dielectric., , , , and . IRPS, page 1-6. IEEE, (2021)High- Temperature PBTI in Trench-Gate Vertical GaN Power MOSFETs: Role of Border and Semiconductor Traps., , , , , , , , , and 1 other author(s). IRPS, page 1-6. IEEE, (2023)Influence of Drain and Gate Potential on Gate Failure in Semi-Vertical GaN-on-Si Trench MOSFETs., , , , , , , , , and 1 other author(s). IRPS, page 20-1. IEEE, (2022)Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition., , , , , , , and . IRPS, page 10. IEEE, (2022)Device optimization for 200V GaN-on-SOI Platform for Monolithicly Integrated Power Circuits., , , , , , , , , and 2 other author(s). ESSDERC, page 245-248. IEEE, (2022)A 16 Channel High-Voltage Driver with 14 Bit Resolution for Driving Piezoelectric Actuators., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 62-I (7): 1726-1736 (2015)A New Charge based Compact Model for Lateral Asymmetric MOSFET and its application to High Voltage MOSFET Modeling., , , , , and . VLSI Design, page 177-182. IEEE Computer Society, (2007)On the origin of the leakage current in p-gate AlGaN/GaN HEMTs., , , , , , , and . IRPS, page 4. IEEE, (2018)A new type of level-shifter for n-type high side switches used in high-voltage switching ADSL line-drivers., , , and . ICECS, page 954-957. IEEE, (2008)