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Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

T. Wu, D. Marcon, B. Jaeger, M. Hove, B. Bakeroot, S. Stoffels, G. Groeseneken, S. Decoutere, and R. Roelofs. IRPS, page 6. IEEE, (2015)

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Steve Völler

Steve Tonah

Steve Blechschmidt

Steve Pasek

Beate Stoffels

Other publications of authors with the same name

Study of the stability of e-mode GaN HEMTs with p-GaN gate based on combined DC and optical analysis.I. Rossetto, M. Meneghini, V. Rizzato, M. Ruzzarin, A. Favaron, S. Stoffels, M. Hove, N. Posthuma, T. Wu, D. Marcon and 3 other author(s). Microelectron. Reliab., (2016)Perimeter Driven Transport in the p-GaN Gate as a Limiting Factor for Gate Reliability.S. Stoffels, N. Posthuma, S. Decoutere, B. Bakeroot, A. Tallarico, E. Sangiorgi, C. Fiegna, J. Zheng, X. Ma, M. Borga and 6 other author(s). IRPS, page 1-10. IEEE, (2019)Reliability of AlGaN/GaN HEMTs: Permanent leakage current increase and output current drop.D. Marcon, J. Viaene, P. Favia, H. Bender, X. Kang, S. Lenci, S. Stoffels, and S. Decoutere. Microelectron. Reliab., 52 (9-10): 2188-2193 (2012)Analysis of multifinger power HEMTs supported by effective 3-D device electrothermal simulation.A. Chvála, J. Marek, P. Pribytny, A. Satka, S. Stoffels, N. Posthuma, S. Decoutere, and D. Donoval. Microelectron. Reliab., (2017)Impact of the substrate and buffer design on the performance of GaN on Si power HEMTs.M. Borga, M. Meneghini, S. Stoffels, M. Hove, M. Zhao, X. Li, S. Decoutere, E. Zanoni, and G. Meneghesso. Microelectron. Reliab., (2018)Stability evaluation of Au-free Ohmic contacts on AlGaN/GaN HEMTs under a constant current stress.T. Wu, D. Marcon, S. Stoffels, S. You, B. Jaeger, M. Hove, G. Groeseneken, and S. Decoutere. Microelectron. Reliab., 54 (9-10): 2232-2236 (2014)Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process.Y. Yamashita, S. Stoffels, N. Posthuma, K. Geens, X. Li, J. Furuta, S. Decoutere, and K. Kobayashi. IEICE Electron. Express, 16 (22): 20190516 (2019)Trapping and reliability issues in GaN-based MIS HEMTs with partially recessed gate.G. Meneghesso, M. Meneghini, D. Bisi, I. Rossetto, T. Wu, M. Hove, D. Marcon, S. Stoffels, S. Decoutere, and E. Zanoni. Microelectron. Reliab., (2016)Field- and current-driven degradation of GaN-based power HEMTs with p-GaN gate: Dependence on Mg-doping level.I. Rossetto, M. Meneghini, E. Canato, M. Barbato, S. Stoffels, N. Posthuma, S. Decoutere, A. Tallarico, G. Meneghesso, and E. Zanoni. Microelectron. Reliab., (2017)New fast distributed thermal model for analysis of GaN based power devices.V. Sodan, F. Maggioni, H. Oprins, S. Stoffels, M. Baelmans, and I. Wolf. ESSDERC, page 172-175. IEEE, (2016)

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Disambiguation of "Stoffels, Steve"

Please choose a person to relate this publication to

Steve Völler

Steve Tonah

Steve Blechschmidt

Steve Pasek

Beate Stoffels

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Stoffels, Steve"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML Time dependent dielectric breakdown (TDDB) evaluation of PE-ALD SiN gate dielectrics on AlGaN/GaN recessed gate D-mode MIS-HEMTs and E-mode MIS-FETs.

Please choose a person to relate this publication to

Steve Völler

Steve Tonah

Steve Blechschmidt

Steve Pasek

Beate Stoffels

Other publications of authors with the same name

Disambiguation