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Disambiguation of "Hisada, Toshiki"

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A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface.

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Other publications of authors with the same name

A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 42 other author(s). ISSCC, page 210-212. IEEE, (2019)A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology., , , , , , , , , and 42 other author(s). ISSCC, page 218-220. IEEE, (2019)A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , and 22 other author(s). IEEE J. Solid State Circuits, 48 (1): 159-167 (2013)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , and 45 other author(s). ISSCC, page 422-424. IEEE, (2012)A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). IEEE J. Solid State Circuits, 55 (1): 178-188 (2020)A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology., , , , , , , , , and 27 other author(s). ISSCC, page 430-431. IEEE, (2008)A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology., , , , , , , , , and 54 other author(s). ISSCC, page 336-338. IEEE, (2018)