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A 120-mm2 64-Mb NAND flash memory achieving 180 ns/Byte effective program speed., , , , , , , , , and 8 other author(s). IEEE J. Solid State Circuits, 32 (5): 670-680 (1997)A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). IEEE J. Solid State Circuits, 55 (1): 178-188 (2020)A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface., , , , , , , , , and 37 other author(s). IEEE J. Solid State Circuits, 58 (1): 316-328 (2023)A 125-mm2 1-Gb NAND flash memory with 10-MByte/s program speed., , , , , , , , , and 10 other author(s). IEEE J. Solid State Circuits, 37 (11): 1493-1501 (2002)A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 42 other author(s). ISSCC, page 210-212. IEEE, (2019)A 120mm2 16Gb 4-MLC NAND Flash Memory with 43nm CMOS Technology., , , , , , , , , and 27 other author(s). ISSCC, page 430-431. IEEE, (2008)An embedded DRAM technology for high-performance NAND flash memories., , , , , and . ISSCC, page 504-505. IEEE, (2011)A 512Gb 3b/Cell 3D flash memory on a 96-word-line-layer technology., , , , , , , , , and 54 other author(s). ISSCC, page 336-338. IEEE, (2018)A 130-mm/2, 256-Mbit NAND flash with shallow trench isolation technology., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 34 (11): 1536-1543 (1999)A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , and 22 other author(s). IEEE J. Solid State Circuits, 48 (1): 159-167 (2013)