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Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor.

, и . ISCAS, стр. 193-196. IEEE, (1994)

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Maria Iñiguez

Benjamín Briseño

Benjamín Briseño

Benjamín Martínez López

Benjamin Köckemann

Abundance, niche breadth and stress in the centre and at the border of the distribution range: a macroecological study on abundant and rare tree specie. Uni Göttingen, (2008)
 

Другие публикации лиц с тем же именем

Modeling the subthreshold region of OTFTs., , , и . CCE, стр. 1-4. IEEE, (2011)3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs., , , и . ESSDERC, стр. 258-261. IEEE, (2014)Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation., , , , , , , , и . ESSDERC, стр. 456-459. IEEE, (2016)Implementation of nanoscale double-gate CMOS circuits using compact advanced transport models., , , , , , и . Microelectron. J., 44 (2): 80-85 (2013)Development of a Cinfinty-Continuous Small-Signal Model for a MOS Transistor., и . ISCAS, стр. 193-196. IEEE, (1994)Modeling the variation of threshold voltage, mobility factor and saturation coefficient in amorphous Indium-Gallium-Zinc Oxide thin film transistors., , , , , , и . CCE, стр. 1-4. IEEE, (2016)Self-consistent 2D Compact Model for Nanoscale Double Gate MOSFETs., , и . International Conference on Computational Science (4), том 3994 из Lecture Notes in Computer Science, стр. 607-614. Springer, (2006)Analytical modeling of RDF effects on the threshold voltage in short-channel double-gate MOSFETs., , , , , , и . MIXDES, стр. 127-131. IEEE, (2017)Compact Modeling of Channel-Resistance Effects in Reconfigurable Field-Effect Transistors., , , , , , , , , и . MIXDES, стр. 33-39. IEEE, (2022)Closed-Form Modeling Approach of Trap-Assisted Tunneling Current for Use in Compact TFET Models., , , и . MIXDES, стр. 81-86. IEEE, (2019)