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3-D compact model for nanoscale junctionless triple-gate nanowire MOSFETs., , , and . ESSDERC, page 258-261. IEEE, (2014)Implementation of a DC compact model for double-gate Tunnel-FET based on 2D calculations and application in circuit simulation., , , , , , , , and . ESSDERC, page 456-459. IEEE, (2016)Analytical Calculation of Inference in Memristor-based Stochastic Artificial Neural Networks., , , , , and . MIXDES, page 83-88. IEEE, (2022)Simulation framework for barrier lowering in Schottky barrier MOSFETs., , , , , and . MIXDES, page 149-153. IEEE, (2017)Wavelet-based calculation of the transmission coefficient for tunneling events in Tunnel-FETs., , and . MIXDES, page 210-215. IEEE, (2015)Impact of Mechanical Bending on the Performance of Organic Thin-Film Transistors and the Characteristic Temperature of the Density of States., , , , , , , and . MIXDES, page 45-50. IEEE, (2022)Characterization of the Charge-Trap Dynamics in Organic Thin-Film Transistors., , , , , , and . MIXDES, page 76-80. IEEE, (2019)Two-dimensional physics-based modeling of electrostatics and band-to-band tunneling in tunnel-FETs., , , , and . MIXDES, page 81-85. IEEE, (2013)Comparative numerical analysis and analytical RDF-modeling of MOSFETs and DG Tunnel-FETs., , , , , , and . MIXDES, page 47-51. IEEE, (2016)Modeling approach for rapid NEGF-based simulation of ballistic current in ultra-short DG MOSFETs., , , , , and . MIXDES, page 52-57. IEEE, (2016)