( en | de | ru )

 

Disambiguation of "Alam, Muhammad Ashraful"

Author of the publication

copydeleteadd this publication to your clipboard
Characterization and Estimation of Circuit Reliability Degradation under NBTI using On-Line IDDQ Measurement.

, , , , and . DAC, page 358-363. IEEE, (2007)

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed. You can also use the button next to the name to display some publications already assigned to the person.

Muhammad Mahboob Alam

Muhammad Muhammad

Masoom Alam

Homayun Alam

Fakhrul Alam

 

Other publications of authors with the same name

Training a quantum annealing based restricted Boltzmann machine on cybersecurity data., , , , and . CoRR, (2020)Physics-guided machine learning predicts the planet-scale performance of solar farms with sparse, heterogeneous, public data., and . CoRR, (2024)OFF-state degradation and correlated gate dielectric breakdown in high voltage drain extended transistors: A review., , , and . Microelectron. Reliab., 54 (8): 1477-1488 (2014)BVDSS (drain to source breakdown voltage) instability in shielded gate trench power MOSFETs., , , , and . IRPS, page 6. IEEE, (2018)Estimation of statistical variation in temporal NBTI degradation and its impact on lifetime circuit performance., , , and . ICCAD, page 730-734. IEEE Computer Society, (2007)Efficient Transistor-Level Sizing Technique under Temporal Performance Degradation due to NBTI., , , and . ICCD, page 216-221. IEEE, (2006)High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics., , , , , , , , , and . IRPS, page 9-1. IEEE, (2018)A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors., , , , , and . IRPS, page 1-6. IEEE, (2020)Computing Nice Projections of Convex Polyhedra., and . Int. J. Comput. Geom. Appl., 21 (1): 71-85 (2011)Cross-coupled Self-Heating and Consequent Reliability Issues in GaN-Si Hetero-integration: Thermal Keep-Out-Zone Quantified., , , , , , and . IRPS, page 1-6. IEEE, (2023)