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High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.

S. Shin, Y. Chen, W. Ahn, H. Guo, B. Williams, J. West, T. Bonifield, D. Varghese, S. Krishnan, and M. Alam. IRPS, page 9-1. IEEE, (2018)

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Srikanth Karnati

Functional characterization of peroxisomes and pathological consequences of peroxisomal dysfunction in the lungS. Karnati. Uni Gießen, (2009)

Srikanth Perike

Krishnan Sircar

Ajay Krishnan

Venkata Krishnan

Other publications of authors with the same name

An Integrated Modeling Paradigm of Circuit Reliability for 65nm CMOS Technology.W. Wang, V. Reddy, A. Krishnan, R. Vattikonda, S. Krishnan, and Y. Cao. CICC, page 511-514. IEEE, (2007)Quantifying Region-Specific Hot Carrier Degradation in LDMOS Transistors Using a Novel Charge Pumping Technique.B. Mahajan, Y. Chen, D. Varghese, V. Reddy, S. Krishnan, and M. Alam. IRPS, page 1-6. IEEE, (2021)A Critical Examination of the TCAD Modeling of Hot Carrier Degradation for LDMOS Transistors.B. Mahajan, Y. Chen, M. Alam, D. Varghese, S. Krishnan, and V. Reddy. IRPS, page 10. IEEE, (2022)Current Crowding Impact on Electromigration in Al Interconnects.Y. Park, J. Joh, J. Chung, and S. Krishnan. IRPS, page 1-6. IEEE, (2019)Time-Dependent Dielectric Breakdown Under AC Stress in GaN MIS-HEMTs.E. Lee, L. Hurtado, J. Joh, S. Krishnan, S. Pendharkar, and J. del Alamo. IRPS, page 1-5. IEEE, (2019)Asymmetric Aging and Workload Sensitive Bias Temperature Instability Sensors.M. Chen, V. Reddy, S. Krishnan, V. Srinivasan, and Y. Cao. IEEE Des. Test Comput., 29 (5): 18-26 (2012)ACE: A robust variability and aging sensor for high-k/metal gate SoC.M. Chen, V. Reddy, S. Krishnan, J. Ondrusek, and Y. Cao. ESSDERC, page 182-185. IEEE, (2013)A Novel 'I-V Spectroscopy' Technique to Deconvolve Threshold Voltage and Mobility Degradation in LDMOS Transistors.Y. Chen, B. Mahajan, D. Varghese, S. Krishnan, V. Reddy, and M. Alam. IRPS, page 1-6. IEEE, (2020)High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.S. Shin, Y. Chen, W. Ahn, H. Guo, B. Williams, J. West, T. Bonifield, D. Varghese, S. Krishnan, and M. Alam. IRPS, page 9-1. IEEE, (2018)Reliability of Metal-Dielectric Structures Under Intermittent Current Pulsing.C. Lee, P. Vaitheeswaran, G. Subbarayan, Y. Park, J. Chung, and S. Krishnan. IRPS, page 1-6. IEEE, (2020)

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Disambiguation of "Krishnan, Srikanth"

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High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.

Please choose a person to relate this publication to

Srikanth Karnati

Srikanth Perike

Krishnan Sircar

Ajay Krishnan

Venkata Krishnan

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Krishnan, Srikanth"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.

Please choose a person to relate this publication to

Srikanth Karnati

Srikanth Perike

Krishnan Sircar

Ajay Krishnan

Venkata Krishnan

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
BibTeX
EndNote
APA
Chicago
DIN 1505
Harvard
MSOffice XML

High voltage time-dependent dielectric breakdown in stacked intermetal dielectrics.