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Comparing Energy, Area, Delay Tradeoffs in Going Vertical with CMOS and Asymmetric HTFETs.

, , , , , and . ISVLSI, page 303-308. IEEE Computer Society, (2015)

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Exploiting Heterogeneity for Energy Efficiency in Chip Multiprocessors., , , , , and . IEEE J. Emerg. Sel. Topics Circuits Syst., 1 (2): 109-119 (2011)The Impact of Ferroelectric FETs on Digital and Analog Circuits and Architectures., , , , , , , , , and 2 other author(s). IEEE Des. Test, 37 (1): 79-99 (2020)Design of 2T/Cell and 3T/Cell Nonvolatile Memories with Emerging Ferroelectric FETs., , , , , , , , , and 1 other author(s). IEEE Des. Test, 36 (3): 39-45 (2019)Improving energy efficiency of multi-threaded applications using heterogeneous CMOS-TFET multicores., , , , , and . ISLPED, page 247-252. IEEE/ACM, (2011)Tunnel FET technology: A reliability perspective., , and . Microelectron. Reliab., 54 (5): 861-874 (2014)Comparative Area and Parasitics Analysis in FinFET and Heterojunction Vertical TFET Standard Cells., , , , , , and . ACM J. Emerg. Technol. Comput. Syst., 12 (4): 38:1-38:23 (2016)Ferroelectric Transistor based Non-Volatile Flip-Flop., , , , , and . ISLPED, page 10-15. ACM, (2016)A defect-aware approach for mapping reconfigurable Single-Electron Transistor arrays., , , , , and . ASP-DAC, page 118-123. IEEE, (2015)Computational paradigms using oscillatory networks based on state-transition devices., , , , and . IJCNN, page 3415-3422. IEEE, (2017)Ferroelectrics: From Memory to Computing., , and . ASP-DAC, page 401-406. IEEE, (2020)