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Strained silicon on insulator substrates for fully depleted application., , , , , , , , , and . ICICDT, page 1-4. IEEE, (2012)Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes., , , , , , , , , and 1 other author(s). ESSDERC, page 226-229. IEEE, (2014)Low Temperature SmartCutTM enables High Density 3D SoC Applications., , and . ICICDT, page 1-2. IEEE, (2019)Engineered SiC materials for power technologies., , , , , , , , , and 21 other author(s). ICICDT, page 55-56. IEEE, (2022)FD-SOI material enabling CMOS technology disruption from 65nm to 12nm and beyond., , , , and . ICICDT, page 1-2. IEEE, (2017)FDSOI: From substrate to devices and circuit applications., , , , and . ESSCIRC, page 45-51. IEEE, (2010)Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)22FD-SOI Variability Improvement Thanks to SmartCut Thickness Control at Atomic Scale., , , , , , and . ESSDERC, page 64-65. IEEE, (2019)Strain and layout management in dual channel (sSOI substrate, SiGe channel) planar FDSOI MOSFETs., , , , , , , , , and 17 other author(s). ESSDERC, page 106-109. IEEE, (2014)