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Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)AC TDDB extensive study for an enlargement of its impact and benefit on circuit lifetime assessment., , , , , and . IRPS, page 4. IEEE, (2018)Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment., , , , , , , and . IRPS, page 5. IEEE, (2015)Process Optimization for HCI Improvement in I/O Analog Devices., , , , , , , and . IRPS, page 1-6. IEEE, (2019)Modeling self-heating effects in advanced CMOS nodes., , , , , and . IRPS, page 3-1. IEEE, (2018)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)Challenges and opportunity in performance, variability and reliability in sub-45 nm CMOS technologies., , , , , and . Microelectron. Reliab., 51 (9-11): 1508-1514 (2011)Frequency dependant gate oxide TDDB model., , , , , , and . IRPS, page 25-1. IEEE, (2022)Unified soft breakdown MOSFETs compact model: From experiments to circuit simulation., , , , and . Microelectron. Reliab., 50 (9-11): 1259-1262 (2010)Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology., , , , , , and . IRPS, page 1-5. IEEE, (2019)