From post

Please choose a person to relate this publication to

To differ between persons with the same name, the academic degree and the title of an important publication will be displayed.

 

Другие публикации лиц с тем же именем

Circuit Design Challenges in Computing-in-Memory for AI Edge Devices., , , , , , , , , и 1 other автор(ы). ASICON, стр. 1-4. IEEE, (2019)Cross-Layer Optimizations in Solid-State Drives., , , и . IEEE Embed. Syst. Lett., 3 (4): 109-112 (2011)A Floating-Point 6T SRAM In-Memory-Compute Macro Using Hybrid-Domain Structure for Advanced AI Edge Chips., , , , , , , , , и 7 other автор(ы). IEEE J. Solid State Circuits, 59 (1): 196-207 (января 2024)Two-Way Transpose Multibit 6T SRAM Computing-in-Memory Macro for Inference-Training AI Edge Chips., , , , , , , , , и 15 other автор(ы). IEEE J. Solid State Circuits, 57 (2): 609-624 (2022)A 22nm 832Kb Hybrid-Domain Floating-Point SRAM In-Memory-Compute Macro with 16.2-70.2TFLOPS/W for High-Accuracy AI-Edge Devices., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 126-127. IEEE, (2023)A 2.75-to-75.9TOPS/W Computing-in-Memory NN Processor Supporting Set-Associate Block-Wise Zero Skipping and Ping-Pong CIM with Simultaneous Computation and Weight Updating., , , , , , , , , и 7 other автор(ы). ISSCC, стр. 238-240. IEEE, (2021)15.2 A 28nm 64Kb Inference-Training Two-Way Transpose Multibit 6T SRAM Compute-in-Memory Macro for AI Edge Chips., , , , , , , , , и 13 other автор(ы). ISSCC, стр. 240-242. IEEE, (2020)34.2 A 16nm 96Kb Integer/Floating-Point Dual-Mode-Gain-Cell-Computing-in-Memory Macro Achieving 73.3-163.3TOPS/W and 33.2-91.2TFLOPS/W for AI-Edge Devices., , , , , , , , , и 5 other автор(ы). ISSCC, стр. 568-570. IEEE, (2024)A 48 TOPS and 20943 TOPS/W 512kb Computation-in-SRAM Macro for Highly Reconfigurable Ternary CNN Acceleration., , , , , , , , , и . A-SSCC, стр. 1-3. IEEE, (2021)A 4-Kb 1-to-8-bit Configurable 6T SRAM-Based Computation-in-Memory Unit-Macro for CNN-Based AI Edge Processors., , , , , , , , , и 8 other автор(ы). IEEE J. Solid State Circuits, 55 (10): 2790-2801 (2020)