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Disambiguation of "Delhougne, Romain"

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Process-induced charging damage in IGZO nTFTs.

, , , , , , , , and . IRPS, page 1-8. IEEE, (2021)

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Maria Delhougne

Henri Delhougne

Else Delhougne

Ulrich Delhougne

Hermine Delhougne

 

Other publications of authors with the same name

Enhanced performance and low-power capability of SiGeAsSe-GeSbTe 1S1R phase-change memory operated in bipolar mode., , , , , , , , , and 3 other author(s). VLSI Technology and Circuits, page 312-313. IEEE, (2022)Enhanced data integrity of In-Ga-Zn-Oxide based Capacitor-less 2T memory for DRAM applications., , , , , , , , , and . ESSDERC, page 275-278. IEEE, (2021)Progress in the physical modeling of carrier illumination, , , , , and . Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 24 (3): 1131--1138 (2006)Demonstration of multilevel multiply accumulate operations for AiMC using engineered a-IGZO transistors-based 2T1C gain cell arrays., , , , , , , , and . IMW, page 1-4. IEEE, (2023)Process-induced charging damage in IGZO nTFTs., , , , , , , , and . IRPS, page 1-8. IEEE, (2021)Device engineering guidelines for performance boost in IGZO front gated TFTs based on defect control., , , , , , , , , and 10 other author(s). ICICDT, page 88. IEEE, (2022)Ultra-low Leakage IGZO-TFTs with Raised Source/Drain for Vt > 0 V and Ion > 30 µA/µm., , , , , , , , , and 14 other author(s). VLSI Technology and Circuits, page 292-293. IEEE, (2022)Lowest IOFF < 3×10-21 A/μm in capacitorless DRAM achieved by Reactive Ion Etch of IGZO-TFT., , , , , , , , , and 1 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)