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A 512Gb 3-bit/Cell 3D Flash Memory on 128-Wordline-Layer with 132MB/s Write Performance Featuring Circuit-Under-Array Technology., , , , , , , , , and 42 other author(s). ISSCC, page 218-220. IEEE, (2019)A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface., , , , , , , , , and 37 other author(s). IEEE J. Solid State Circuits, 58 (1): 316-328 (2023)A 16Gb 3b/ Cell NAND Flash Memory in 56nm with 8MB/s Write Rate., , , , , , , , , and 38 other author(s). ISSCC, page 506-507. IEEE, (2008)A 113mm2 32Gb 3b/cell NAND flash memory., , , , , , , , , and 28 other author(s). ISSCC, page 242-243. IEEE, (2009)A 16 Gb 3-Bit Per Cell (X3) NAND Flash Memory on 56 nm Technology With 8 MB/s Write Rate., , , , , , , , , and 38 other author(s). IEEE J. Solid State Circuits, 44 (1): 195-207 (2009)11.1 A 512Gb 3b/cell flash memory on 64-word-line-layer BiCS technology., , , , , , , , , and 47 other author(s). ISSCC, page 196-197. IEEE, (2017)A 19 nm 112.8 mm2 64 Gb Multi-Level Flash Memory With 400 Mbit/sec/pin 1.8 V Toggle Mode Interface., , , , , , , , , and 22 other author(s). IEEE J. Solid State Circuits, 48 (1): 159-167 (2013)A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface., , , , , , , , , and 39 other author(s). ISSCC, page 130-132. IEEE, (2022)A 19nm 112.8mm2 64Gb multi-level flash memory with 400Mb/s/pin 1.8V Toggle Mode interface., , , , , , , , , and 45 other author(s). ISSCC, page 422-424. IEEE, (2012)