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A 1Tb 3b/Cell 3D-Flash Memory of more than 17Gb/mm2 bit density with 3.2Gbps interface and 205MB/s program throughput., , , , , , , , , and 10 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)A 1-Tb 4b/Cell 4-Plane 162-Layer 3D Flash Memory With a 2.4-Gb/s I/O Speed Interface., , , , , , , , , and 39 other author(s). ISSCC, page 130-132. IEEE, (2022)A 1-Tb 4-b/cell 4-Plane 162-Layer 3-D Flash Memory With 2.4-Gb/s IO Interface., , , , , , , , , and 37 other author(s). IEEE J. Solid State Circuits, 58 (1): 316-328 (2023)A 1.33Tb 4-bit/Cell 3D-Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 42 other author(s). ISSCC, page 210-212. IEEE, (2019)A 113mm2 32Gb 3b/cell NAND flash memory., , , , , , , , , and 28 other author(s). ISSCC, page 242-243. IEEE, (2009)A 1.33-Tb 4-Bit/Cell 3-D Flash Memory on a 96-Word-Line-Layer Technology., , , , , , , , , and 39 other author(s). IEEE J. Solid State Circuits, 55 (1): 178-188 (2020)A 151mm2 64Gb MLC NAND flash memory in 24nm CMOS technology., , , , , , , , , and 32 other author(s). ISSCC, page 198-199. IEEE, (2011)A 151-mm2 64-Gb 2 Bit/Cell NAND Flash Memory in 24-nm CMOS Technology., , , , , , , , , and 32 other author(s). IEEE J. Solid State Circuits, 47 (1): 75-84 (2012)7-Bit/2Cell (X3.5), 9-Bit/2Cell (X4.5) NAND Flash Memory: Half Bit technology., , , , , and . IMW, page 1-4. IEEE, (2023)30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology., , , , , , , , , and 49 other author(s). ISSCC, page 428-430. IEEE, (2021)