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Si MOS technology for spin-based quantum computing., , , , , , , , , and 7 other author(s). ESSDERC, page 12-17. IEEE, (2018)The Coupled Atom Transistor: A first realization with shallow donors implanted in a FDSOI silicon nanowire., , , , , , , , , and 2 other author(s). ESSDERC, page 147-150. IEEE, (2013)19.2 A 110mK 295µW 28nm FDSOI CMOS Quantum Integrated Circuit with a 2.8GHz Excitation and nA Current Sensing of an On-Chip Double Quantum Dot., , , , , , , , , and 1 other author(s). ISSCC, page 306-308. IEEE, (2020)Mass Production of Silicon MOS-SETs: Can We Live with Nano-Devices' Variability?, , , , , , , , , and 8 other author(s). FET, volume 7 of Procedia Computer Science, page 266-268. Elsevier, (2011)Towards scalable silicon quantum computing., , , , , , , , , and 7 other author(s). DRC, page 1-2. IEEE, (2018)MOS technology for quantum computing: recent progress and perspectives for scaling up., , , , , , , , , and 3 other author(s). DRC, page 1-2. IEEE, (2021)Scaling of Trigate nanowire (NW) MOSFETs Down to 5 nm Width: 300 K transition to Single Electron Transistor, challenges and opportunities., , , , , , , , , and 6 other author(s). ESSDERC, page 121-124. IEEE, (2012)SOI CMOS technology for quantum information processing., , , , , , , , , and 5 other author(s). ICICDT, page 1-4. IEEE, (2017)