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Impacts of NBTI and PBTI on SRAM static/dynamic noise margins and cell failure probability.

, , , , , and . Microelectron. Reliab., 49 (6): 642-649 (2009)

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A 0.35 V, 375 kHz, 5.43 µW, 40 nm, 128 kb, symmetrical 10T subthreshold SRAM with tri-state bit-line., , , , , , and . Microelectron. J., (2016)Reducing parasitic BJT effects in partially depleted SOI digital logic circuits., , and . Microelectron. J., 39 (2): 275-285 (2008)Self-Repairing SRAM Using On-Chip Detection and Compensation., , , , and . IEEE Trans. Very Large Scale Integr. Syst., 18 (1): 75-84 (2010)40 nm Bit-Interleaving 12T Subthreshold SRAM With Data-Aware Write-Assist., , , , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 61-I (9): 2578-2585 (2014)Single-Ended Subthreshold SRAM With Asymmetrical Write/Read-Assist., , , , and . IEEE Trans. Circuits Syst. I Regul. Pap., 57-I (12): 3039-3047 (2010)A high-performance low VMIN 55nm 512Kb disturb-free 8T SRAM with adaptive VVSS control., , , , , , , , , and 9 other author(s). SoCC, page 197-200. IEEE, (2011)Evaluation of Read- and Write-Assist circuits for GeOI FinFET 6T SRAM cells., , , and . ISCAS, page 1122-1125. IEEE, (2014)Benchmarking of Monolayer and Bilayer Two-Dimensional Transition Metal Dichalcogenide (TMD) Based Logic Circuits and 6T SRAM Cells., , and . ISLPED, page 242-247. ACM, (2016)A floating-body dynamic supply boosting technique for low-voltage sram in nanoscale PD/SOI CMOS technologies., , , , and . ISLPED, page 8-13. ACM, (2007)Stability and performance optimization of InGaAs-OI and GeOI hetero-channel SRAM cells., , , and . ESSDERC, page 77-80. IEEE, (2012)