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Disambiguation of "de Vasconcelos, EA"

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Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors

, , and . MICROELECTRONIC ENGINEERING, (2000)3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999.
DOI: 10.1016/S0167-9317(99)00520-1

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Lúcia Dias de Vasconcelos Duarte

Kuon Ea

João Vasconcelos

Daniel Vasconcelos

John Eastman

 

Other publications of authors with the same name

Time evolution of SiO2/Si interface defects and dopant passivation in MOS capacitors, , and . MICROELECTRONIC ENGINEERING, (2000)3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999.An improved description of the dielectric breakdown in oxides based on a generalized Weibull distribution, , , , , , and . PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 361 (1): 209-215 (2006)A new method for luminescent porous silicon formation: reaction-induced vapor-phase stain etch, , , , and . PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 202 (8): 1539-1542 (2005)4th International Conference on Porous Semiconductors - Science and Technology (PSST-2004), Cullera, SPAIN, MAR 14-19, 2004.A percolation based dielectric breakdown model with randomic changes in the dielectric constant, , , , and . PHYSICA A-STATISTICAL MECHANICS AND ITS APPLICATIONS, 305 (3-4): 351-359 (2002)Statistical analysis of topographic images of nanoporous silicon and model surfaces, , , , , , and . MICROELECTRONICS JOURNAL, 36 (11, SI): 1011-1015 (2005)4th Workshop on Semiconductor Nanodevices and Nanostructured Materials, Sao Pedro, BRAZIL, MAR 09-13, 2005.The role of multiple damaged layers at the Si/SiO2 interface on the dielectric breakdown of MOS capacitors, , , , and . APPLIED SURFACE SCIENCE, 190 (1-4): 35-38 (2002)8th International Conference on the Formation of Semiconductor Interfaces (ICFSI-8), HOKKAIDO UNIV, SAPPORO, JAPAN, JUN 10-15, 2001.Effect of ageing on x-ray induced dopant passivation in MOS capacitors, , , and . SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 15 (8): 794-798 (2000)Dynamics of SiO2/SiOx/Si multilayer growth and interfacial effects on silicon quantum well confinement properties, , , , , and . MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 74 (1-3): 188-192 (2000)3rd International Conference on Low Dimensional Structures and Devices (LDSD 99), ANTALYA, TURKEY, SEP 15-17, 1999.