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Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper., , , , , , , , , and 3 other author(s). ICICDT, page 1-4. IEEE, (2021)Demonstration of 3D sequential FD-SOI on CMOS FinFET stacking featuring low temperature Si layer transfer and top tier device fabrication with tier interconnections., , , , , , , , , and 15 other author(s). VLSI Technology and Circuits, page 330-331. IEEE, (2022)Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling., , , , , , , , , and 15 other author(s). ICICDT, page 145-148. IEEE, (2018)Reliability challenges in Forksheet Devices: (Invited Paper)., , , , , , , , , and 2 other author(s). IRPS, page 1-8. IEEE, (2023)Scaling CMOS beyond Si FinFET: an analog/RF perspective., , , , , , , , , and 4 other author(s). ESSDERC, page 158-161. IEEE, (2018)Molybdenum Nitride as a Scalable and Thermally Stable pWFM for CFET., , , , , , , , , and 11 other author(s). VLSI Technology and Circuits, page 1-2. IEEE, (2023)Beyond-Si materials and devices for more Moore and more than Moore applications., , , , , , , , , and 16 other author(s). ICICDT, page 1-5. IEEE, (2016)