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III-V HBTs on 300 mm Si substrates using merged nano-ridges and its application in the study of impact of defects on DC and RF performance., , , , , , , , , and 4 other author(s). ESSDERC, page 261-264. IEEE, (2022)Sequential 3D: Key integration challenges and opportunities for advanced semiconductor scaling., , , , , , , , , and 15 other author(s). ICICDT, page 145-148. IEEE, (2018)Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors., , , , , , and . ESSDERC, page 412-415. IEEE, (2016)A Composite AlGaN/cGaN Back Barrier for mm-Wave GaN-on-Si HEMTs., , , , , , , , and . ESSDERC, page 152-155. IEEE, (2023)The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices., , , , , , , , , and 2 other author(s). IRPS, page 5. IEEE, (2015)ESD characterization of planar InGaAs devices., , , , , , , , , and 7 other author(s). IRPS, page 3. IEEE, (2015)Silicon LEDs in FinFET technology., , , , , and . ESSDERC, page 274-277. IEEE, (2014)Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer., , , , , , , , , and 4 other author(s). ESSDERC, page 384-387. IEEE, (2022)Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications., , , , , , , and . IRPS, page 11. IEEE, (2022)On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices., , , , , , , , and . IRPS, page 1-8. IEEE, (2021)