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A Physically Unclonable Function with 0% BER Using Soft Oxide Breakdown in 40nm CMOS., , , , , and . A-SSCC, page 157-160. IEEE, (2018)Characterization of time-dependent variability using 32k transistor arrays in an advanced HK/MG technology., , , , , , , , , and . IRPS, page 3. IEEE, (2015)The properties, effect and extraction of localized defect profiles from degraded FET characteristics., , , , , , , , , and 1 other author(s). IRPS, page 1-7. IEEE, (2021)A BSIM-Based Predictive Hot-Carrier Aging Compact Model., , , , , , , , , and . IRPS, page 1-9. IEEE, (2021)The defect-centric perspective of device and circuit reliability - From individual defects to circuits., , , , , , , , , and 5 other author(s). ESSDERC, page 218-225. IEEE, (2015)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability., , , , , , , , , and 4 other author(s). Microelectron. Reliab., (2018)Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper., , , , , , , , and . IRPS, page 1-10. IEEE, (2023)Improving the Tamper-Aware Odometer Concept by Enhancing Dynamic Stress Operation., , , , , and . IRPS, page 1-9. IEEE, (2023)Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors., , , , , , , , , and 2 other author(s). IRPS, page 10. IEEE, (2022)Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs., , , , , , , , , and . IRPS, page 6. IEEE, (2022)