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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

B. Kaczer, J. Franco, P. Weckx, P. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais, F. Catthoor, G. Rzepa, M. Waltl, and T. Grasser. Microelectron. Reliab., (2018)

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Vamsi Krishna Kodali

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Impact of slow and fast oxide traps on In0.53Ga0.47As device operation studied using CET maps.V. Putcha, J. Franco, A. Vais, B. Kaczer, S. Sioncke, D. Linten, and G. Groeseneken. IRPS, page 5. IEEE, (2018)Origins and implications of increased channel hot carrier variability in nFinFETs.B. Kaczer, J. Franco, M. Cho, T. Grasser, P. Roussel, S. Tyaginov, M. Bina, Y. Wimmer, L. Procel, L. Trojman and 11 other author(s). IRPS, page 3. IEEE, (2015)Modelling ultra-fast threshold voltage instabilities in Hf-based ferroelectrics.B. O'Sullivan, B. Truijen, V. Putcha, A. Grill, A. Chasin, G. den Bosch, B. Kaczer, M. Alam, and J. Houdt. IRPS, page 4. IEEE, (2022)A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.B. Kaczer, J. Franco, P. Weckx, P. Roussel, V. Putcha, E. Bury, M. Simicic, A. Chasin, D. Linten, B. Parvais and 4 other author(s). Microelectron. Reliab., (2018)On the impact of buffer and GaN-channel thickness on current dispersion for GaN-on-Si RF/mmWave devices.V. Putcha, L. Cheng, A. Alian, M. Zhao, H. Lu, B. Parvais, N. Waldron, D. Linten, and N. Collaert. IRPS, page 1-8. IEEE, (2021)Interpretation and modelling of dynamic-RON kinetics in GaN-on-Si HEMTs for mm-wave applications.V. Putcha, H. Yu, J. Franco, S. Yadav, A. Alian, U. Peralagu, B. Parvais, and N. Collaert. IRPS, page 11. IEEE, (2022)Impact of channel thickness scaling on the performance of GaN-on-Si RF HEMTs on highly C-doped GaN buffer.A. Alian, R. Rodríguez, S. Yadav, U. Peralagu, A. Hernandez, V. Putcha, M. Zhao, R. ElKashlan, B. Vermeersch, H. Yu and 4 other author(s). ESSDERC, page 384-387. IEEE, (2022)Exploring the DC reliability metrics for scaled GaN-on-Si devices targeted for RF/5G applications.V. Putcha, E. Bury, J. Franco, A. Walke, S. Zhao, U. Peralagu, M. Zhao, A. Alian, B. Kaczer, N. Waldron and 3 other author(s). IRPS, page 1-8. IEEE, (2020)

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Disambiguation of "Putcha, Vamsi"

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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

Please choose a person to relate this publication to

Vamsi Krishna Kodali

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Putcha, Vamsi"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.

Please choose a person to relate this publication to

Vamsi Krishna Kodali

Other publications of authors with the same name

Disambiguation

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A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability.