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Carbon-doped Ge2Sb2Te5 phase-change memory devices featuring reduced RESET current and power consumption., , , , , , , , , and 9 other author(s). ESSDERC, page 286-289. IEEE, (2012)Analog performance of strained SOI nanowires down to 10K., , , , , , and . ESSDERC, page 222-225. IEEE, (2016)Initial and PBTI-induced traps and charges in Hf-based oxides/TiN stacks., , , , , and . Microelectron. Reliab., 47 (4-5): 489-496 (2007)A new method for quickly evaluating reversible and permanent components of the BTI degradation., , , , , , , and . IRPS, page 6-1. IEEE, (2018)Influence of device scaling on low-frequency noise in SOI tri-gate N- and p-type Si nanowire MOSFETs., , , , , , and . ESSDERC, page 300-303. IEEE, (2013)Superior performance and Hot Carrier reliability of Strained FDSOI nMOSFETs for advanced CMOS technology nodes., , , , , , , , , and 1 other author(s). ESSDERC, page 226-229. IEEE, (2014)Harmonic distortion analysis of triple gate SOI nanowire MOSFETS down to 100 K., , , , , , , and . Microelectron. Reliab., (2017)Drain current model for short-channel triple gate junctionless nanowire transistors., , , , , , , and . Microelectron. Reliab., (2016)Strain effect on mobility in nanowire MOSFETs down to 10nm width: Geometrical effects and piezoresistive model., , , , , , , and . ESSDERC, page 210-213. IEEE, (2015)Performance and reliability of strained SOI transistors for advanced planar FDSOI technology., , , , , , , , , and . IRPS, page 2. IEEE, (2015)