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17.5 A 3T1R nonvolatile TCAM using MLC ReRAM with Sub-1ns search time., , , , , , , , , and 1 other author(s). ISSCC, page 1-3. IEEE, (2015)A 260mV L-shaped 7T SRAM with bit-line (BL) Swing expansion schemes based on boosted BL, asymmetric-VTH read-port, and offset cell VDD biasing techniques., , , , , , , , , and 2 other author(s). VLSIC, page 112-113. IEEE, (2012)A 65nm 1Mb nonvolatile computing-in-memory ReRAM macro with sub-16ns multiply-and-accumulate for binary DNN AI edge processors., , , , , , , , , and 7 other author(s). ISSCC, page 494-496. IEEE, (2018)A 1Mb Multibit ReRAM Computing-In-Memory Macro with 14.6ns Parallel MAC Computing Time for CNN Based AI Edge Processors., , , , , , , , , and 12 other author(s). ISSCC, page 388-390. IEEE, (2019)A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing., , , , , , , , , and . IEEE J. Solid State Circuits, 51 (11): 2786-2798 (2016)A Resistance Drift Compensation Scheme to Reduce MLC PCM Raw BER by Over 100× for Storage Class Memory Applications., , , , , , , , , and 3 other author(s). IEEE J. Solid State Circuits, 52 (1): 218-228 (2017)Introduction to the Special Issue on the 2019 IEEE International Solid-State Circuits Conference (ISSCC)., , , and . IEEE J. Solid State Circuits, 55 (1): 3-5 (2020)A Sub-0.3 V Area-Efficient L-Shaped 7T SRAM With Read Bitline Swing Expansion Schemes Based on Boosted Read-Bitline, Asymmetric-VTH Read-Port, and Offset Cell VDD Biasing Techniques., , , , , , , , , and 1 other author(s). IEEE J. Solid State Circuits, 48 (10): 2558-2569 (2013)Noise-Immune Embedded NAND-ROM Using a Dynamic Split Source-Line Scheme for VDDmin and Speed Improvements., , , , , and . IEEE J. Solid State Circuits, 45 (10): 2142-2155 (2010)5.9 A 0.8V Multimode Vision Sensor for Motion and Saliency Detection with Ping-Pong PWM Pixel., , , , , , , , , and 3 other author(s). ISSCC, page 110-112. IEEE, (2020)