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Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator.

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Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator., , , , , , , , и . CoRR, (2017)Towards DTCO in High Temperature GaN-on-Si Technology: Arithmetic Logic Unit at 300 °C and CAD Framework up to 500 °C., , , , , , , , , и 2 other автор(ы). VLSI Technology and Circuits, стр. 1-2. IEEE, (2023)Materials and Technology Issues for the Next Generation of Power Electronic Devices., , , , , и . DRC, стр. 1-2. IEEE, (2020)First Demonstration of GaN Vertical Power FinFETs on Engineered Substrate., , , , , и . DRC, стр. 1-2. IEEE, (2020)Multiscale Co-Design Analysis of Energy, Latency, Area, and Accuracy of a ReRAM Analog Neural Training Accelerator., , , , , , , , и . IEEE J. Emerg. Sel. Topics Circuits Syst., 8 (1): 86-101 (2018)First Demonstration of GaN RF HEMTs on Engineered Substrate., , , , , и . DRC, стр. 1-2. IEEE, (2023)Impact of Linearity and Write Noise of Analog Resistive Memory Devices in a Neural Algorithm Accelerator., , , , , , , , и . ICRC, стр. 1-10. IEEE, (2017)Using Floating Gate Memory to Train Ideal Accuracy Neural Networks., , , , , , , , и . CoRR, (2019)