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A 1-V Bandgap Reference in 7-nm FinFET With a Programmable Temperature Coefficient and Inaccuracy of ±0.2% From -45°C to 125°C.

, , , , , , , and . IEEE J. Solid State Circuits, 54 (7): 1830-1840 (2019)

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A 13Bit 5GS/S ADC with Time-Interleaved Chopping Calibration in 16NM FinFET., , , , , , , , , and 10 other author(s). VLSI Circuits, page 99-100. IEEE, (2018)An All-Programmable 16-nm RFSoC for Digital-RF Communications., , and . IEEE Micro, 38 (2): 61-71 (2018)Software Abstraction of Next Generation Radio Access Networks.. ESSCIRC, page 277-280. IEEE, (2023)16.3 A 330mW 14b 6.8GS/s dual-mode RF DAC in 16nm FinFET achieving -70.8dBc ACPR in a 20MHz channel at 5.2GHz., , , , , , , , , and 3 other author(s). ISSCC, page 280-281. IEEE, (2017)BJT Device and Circuit Co-Optimization Enabling Bandgap Reference and Temperature Sensing in 7-nm FinFET., , , , , , , , and . ESSDERC, page 86-89. IEEE, (2018)A modular 16NM Direct-RF TX/RX Embedding 9GS/S DAC and 4.5GS/S ADC with 90DB Isolation and Sub-80PS Channel Alignment for Monolithic Integration in 5G Base-Station SoC., , , , , , , , , and 3 other author(s). VLSI Circuits, page 219-220. IEEE, (2018)6.3 A Heterogeneous 3D-IC consisting of two 28nm FPGA die and 32 reconfigurable high-performance data converters., , , , , , , , , and 5 other author(s). ISSCC, page 120-121. IEEE, (2014)A programmable RFSoC in 16nm FinFET technology for wideband communications., , , , , , , , , and 5 other author(s). A-SSCC, page 1-4. IEEE, (2017)A 1-V Bandgap Reference in 7-nm FinFET With a Programmable Temperature Coefficient and Inaccuracy of ±0.2% From -45°C to 125°C., , , , , , , and . IEEE J. Solid State Circuits, 54 (7): 1830-1840 (2019)A 1 V Bandgap Reference in 7-nm FinFET with a Programmable Temperature Coefficient and an Inaccuracy of ±0.2% from -45°C to 125°C., , , , , , , and . ESSCIRC, page 78-81. IEEE, (2018)