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First integration of Cu TSV using die-to-wafer direct bonding and planarization.

P. Leduc, M. Assous, L. Cioccio, M. Zussy, T. Signamarcheix, A. Roman, M. Rousseau, S. Verrun, L. Bally, D. Bouchu, L. Cadix, A. Farcy, and N. Sillon. 3DIC, page 1-5. IEEE, (2009)

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Thomas Leduc

Birgit Ledüc

Claudia Ledüc

André Leduc-Leballeur

Patrick Pfeffer

Optimiertes Design kombinatorischer Verbindungsbibliotheken durch genetische Algorithmen und deren Bewertung anhand wissensbasierter Protein-Ligand-BindungsprofileP. Pfeffer. Uni Marburg, (2009)

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First integration of Cu TSV using die-to-wafer direct bonding and planarization.P. Leduc, M. Assous, L. Cioccio, M. Zussy, T. Signamarcheix, A. Roman, M. Rousseau, S. Verrun, L. Bally, D. Bouchu and 3 other author(s). 3DIC, page 1-5. IEEE, (2009)RF characterization of substrate coupling between TSV and MOS transistors in 3D integrated circuits.M. Brocard, C. Bermond, T. Lacrevaz, A. Farcy, P. Maitre, P. Scheer, P. Leduc, S. Cheramy, and B. Fléchet. 3DIC, page 1-8. IEEE, (2013)Panel: "will 3D-IC remain a technology of the future... even in the future?".M. Casale-Rossi, P. Leduc, G. Micheli, P. Blouet, B. Farley, A. Fontanelli, D. Milojevic, and S. Smith. DATE, page 1526-1530. EDA Consortium San Jose, CA, USA / ACM DL, (2013)A successful implementation of dual damascene architecture to copper TSV for 3D high density applications.R. Farhane, M. Assous, P. Leduc, A. Thuaire, D. Bouchu, H. Feldis, and N. Sillon. 3DIC, page 1-4. IEEE, (2010)Modelling of Through Silicon Via RF performance and impact on signal transmission in 3D integrated circuits.L. Cadix, A. Farcy, C. Bermond, C. Fuchs, P. Leduc, M. Rousseau, M. Assous, A. Valentian, J. Roullard, E. Eid and 3 other author(s). 3DIC, page 1-7. IEEE, (2009)System on Wafer: A New Silicon Concept in SiP.G. Poupon, N. Sillon, D. Henry, C. Gillot, A. Mathewson, L. Cioccio, B. Charlet, P. Leduc, M. Vinet, and P. Batude. Proc. IEEE, 97 (1): 60-69 (2009)An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling.L. Cioccio, P. Gueguen, R. Taibi, T. Signamarcheix, L. Bally, L. Vandroux, M. Zussy, S. Verrun, J. Dechamp, P. Leduc and 5 other author(s). 3DIC, page 1-4. IEEE, (2009)Reliability of TSV interconnects: Electromigration, thermal cycling, and impact on above metal level dielectric.T. Frank, S. Moreau, C. Chappaz, P. Leduc, L. Arnaud, A. Thuaire, E. Chery, F. Lorut, L. Anghel, and G. Poupon. Microelectron. Reliab., 53 (1): 17-29 (2013)Which interconnects for which 3D applications? Status and perspectives.Y. Lamy, J. Colonna, G. Simon, P. Leduc, S. Cheramy, and C. Laviron. 3DIC, page 1-6. IEEE, (2013)

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Disambiguation of "Leduc, Patrick"

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First integration of Cu TSV using die-to-wafer direct bonding and planarization.

Please choose a person to relate this publication to

Thomas Leduc

Birgit Ledüc

Claudia Ledüc

André Leduc-Leballeur

Patrick Pfeffer

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Leduc, Patrick"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML First integration of Cu TSV using die-to-wafer direct bonding and planarization.

Please choose a person to relate this publication to

Thomas Leduc

Birgit Ledüc

Claudia Ledüc

André Leduc-Leballeur

Patrick Pfeffer

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
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URL
DOI
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First integration of Cu TSV using die-to-wafer direct bonding and planarization.