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First integration of Cu TSV using die-to-wafer direct bonding and planarization., , , , , , , , , and 3 other author(s). 3DIC, page 1-5. IEEE, (2009)An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling., , , , , , , , , and 5 other author(s). 3DIC, page 1-4. IEEE, (2009)200°C direct bonding copper interconnects : Electrical results and reliability., , , , , and . 3DIC, page 1-4. IEEE, (2011)Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding., , , , , , , , , and . 3DIC, page 1-8. IEEE, (2014)Deep-amorphization and solid-phase epitaxial regrowth processes for hybrid orientation technologies in SOI MOSFETs with thin body., , , , , , , and . Microelectron. Reliab., 52 (11): 2602-2608 (2012)Novel low temperature 3D wafer stacking technology for high density device integration., , , , , , , , , and 1 other author(s). ESSDERC, page 151-154. IEEE, (2013)Chip to wafer copper direct bonding electrical characterization and thermal cycling., , , , , , , , and . 3DIC, page 1-7. IEEE, (2013)Recent Developments of Cu-Cu non-thermo compression bonding for wafer-to-wafer 3D stacking., , , , , , , , , and 3 other author(s). 3DIC, page 1-6. IEEE, (2010)Overcoming the Data Deluge Challenges with Greener Electronics., , , , , , , , , and 4 other author(s). ESSCIRC, page 7-14. IEEE, (2021)