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First integration of Cu TSV using die-to-wafer direct bonding and planarization.

P. Leduc, M. Assous, L. Cioccio, M. Zussy, T. Signamarcheix, A. Roman, M. Rousseau, S. Verrun, L. Bally, D. Bouchu, L. Cadix, A. Farcy, and N. Sillon. 3DIC, page 1-5. IEEE, (2009)

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Didier Léautey

Léa Guizol

Léa Meyer

Léa Louisa Trémezaygues

Winston Leach

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First integration of Cu TSV using die-to-wafer direct bonding and planarization.P. Leduc, M. Assous, L. Cioccio, M. Zussy, T. Signamarcheix, A. Roman, M. Rousseau, S. Verrun, L. Bally, D. Bouchu and 3 other author(s). 3DIC, page 1-5. IEEE, (2009)System on Wafer: A New Silicon Concept in SiP.G. Poupon, N. Sillon, D. Henry, C. Gillot, A. Mathewson, L. Cioccio, B. Charlet, P. Leduc, M. Vinet, and P. Batude. Proc. IEEE, 97 (1): 60-69 (2009)An innovative die to wafer 3D integration scheme: Die to wafer oxide or copper direct bonding with planarised oxide inter-die filling.L. Cioccio, P. Gueguen, R. Taibi, T. Signamarcheix, L. Bally, L. Vandroux, M. Zussy, S. Verrun, J. Dechamp, P. Leduc and 5 other author(s). 3DIC, page 1-4. IEEE, (2009)Toward Eco-Design of a 5G mmWave Transmitarray Antenna Based on Life Cycle Assessment.J. Guérid, J. Doré, J. Reverdy, B. Reig, A. Clemente, and L. Cioccio. EuCNC, page 440-445. IEEE, (2022)200°C direct bonding copper interconnects : Electrical results and reliability.L. Cioccio, R. Taibi, C. Chappaz, S. Moreau, L. Chapelon, and T. Signamarcheix. 3DIC, page 1-4. IEEE, (2011)3-D Capacitive Interconnections for Wafer-Level and Die-Level Assembly.A. Fazzi, L. Magagni, M. Mirandola, B. Charlet, L. Cioccio, E. Jung, R. Canegallo, and R. Guerrieri. IEEE J. Solid State Circuits, 42 (10): 2270-2282 (2007)Advances toward reliable high density Cu-Cu interconnects by Cu-SiO2 direct hybrid bonding.Y. Beilliard, S. Moreau, L. Cioccio, P. Coudrain, G. Romano, A. Nowodzinski, F. Aussenac, P. Jouneau, E. Rolland, and T. Signamarcheix. 3DIC, page 1-8. IEEE, (2014)Low temperature direct bonding: An attractive technique for heterostructures build-up.H. Moriceau, F. Rieutord, F. Fournel, L. Cioccio, C. Moulet, L. Libralesso, P. Gueguen, R. Taibi, and C. Deguet. Microelectron. Reliab., 52 (2): 331-341 (2012)Impact of containment and deposition method on sub-micron chip-to-wafer self-assembly yield.S. Mermoz, L. Sanchez, L. Cioccio, J. Berthier, E. Deloffre, and C. Fretigny. 3DIC, page 1-5. IEEE, (2011)Chip to wafer copper direct bonding electrical characterization and thermal cycling.Y. Beilliard, P. Coudrain, L. Cioccio, S. Moreau, L. Sanchez, B. Montmayeul, T. Signamarcheix, R. Estevez, and G. Parry. 3DIC, page 1-7. IEEE, (2013)

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Disambiguation of "Cioccio, Léa Di"

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First integration of Cu TSV using die-to-wafer direct bonding and planarization.

Please choose a person to relate this publication to

Didier Léautey

Léa Guizol

Léa Meyer

Léa Louisa Trémezaygues

Winston Leach

Other publications of authors with the same name

Disambiguation

BibSonomy

Disambiguation of "Cioccio, Léa Di"

copydeleteadd this publication to your clipboardcommunity posthistory of this postURLDOIBibTeXEndNoteAPAChicagoDIN 1505HarvardMSOffice XML First integration of Cu TSV using die-to-wafer direct bonding and planarization.

Please choose a person to relate this publication to

Didier Léautey

Léa Guizol

Léa Meyer

Léa Louisa Trémezaygues

Winston Leach

Other publications of authors with the same name

Disambiguation

copy delete add this publication to your clipboard
community post
history of this post
URL
DOI
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First integration of Cu TSV using die-to-wafer direct bonding and planarization.