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Overview of 3D NAND Technologies and Outlook Invited Paper., and . NVMTS, page 1-5. IEEE, (2018)NBTI reliability of Ni FUSI/HfSiON gates: Effect of silicide phase., , , , , , , and . Microelectron. Reliab., 47 (4-5): 505-507 (2007)Impact of Off State Stress on advanced high-K metal gate NMOSFETs., , , , , , and . ESSDERC, page 365-368. IEEE, (2014)I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration., , , , , , , , , and 2 other author(s). ICICDT, page 1-4. IEEE, (2015)Assessment of SiGe quantum well transistors for DRAM peripheral applications., , , , , , , , , and 1 other author(s). ICICDT, page 1-4. IEEE, (2015)Off-state stress degradation mechanism on advanced p-MOSFETs., , , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors., , , , , , , , , and 8 other author(s). ESSDERC, page 190-193. IEEE, (2013)Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs., , , , , , , and . ICICDT, page 1-4. IEEE, (2015)Negative bias temperature instabilities in HfSiO(N)-based MOSFETs: Electrical characterization and modeling., , , , and . Microelectron. Reliab., 47 (6): 880-889 (2007)Investigation of Bulk and DTMOS triple-gate devices under 60 MeV proton irradiation., , , , , and . Microelectron. Reliab., 54 (11): 2349-2354 (2014)